Abstract

We demonstrate evanescently-coupled GaAs_0.5Sb_0.5/In_0.53Al_yGa_0.47-yAs modified uni-traveling carrier (MUTC) waveguide photodiodes (PDs) with high bandwidth (BW) of 66 GHz at zero bias and over 100 GHz bandwidth under low bias condition. An In_xAl_yGa_1-x-yAs dual-integrated waveguide-drift layer which can facilitate efficient light coupling from the waveguide into the absorber over a short length is utilized. A 7-μm long waveguide PD has an internal responsivity of 0.48 A/W at 1550 nm and clearly open eye diagrams at 40 Gb/s are demonstrated at zero bias.

High-performance inverted evanescently coupled waveguide integrated MUTC-PD with high response speed

Fangli Wang, Bojian Zhang, and Liang Wang
Appl. Opt. 60(34) 10696-10703 (2021)

High saturation photocurrent THz waveguide-type MUTC-photodiodes reaching mW output power within the WR3.4 band

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Enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs_0.5Sb_0.5/In_0.53Ga_0.47As type-II hybrid absorbers

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Opt. Express 27(11) 15495-15504 (2019)

Ultrafast MUTC photodiodes over 200 GHz with high saturation power

Yuxin Tian, Bing Xiong, Changzheng Sun, Zhibiao Hao, Jian Wang, Lai Wang, Yanjun Han, Hongtao Li, Lin Gan, and Yi Luo
Opt. Express 31(15) 23790-23800 (2023)

Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model

Jin Li, Bing Xiong, Changzheng Sun, Di Miao, and Yi Luo
Opt. Express 23(17) 21615-21623 (2015)