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Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 32,
  • Issue 8,
  • pp. 1457-1462
  • (2014)

High-Q Photonic Crystal Nanocavities on 300 mm SOI Substrate Fabricated With 193 nm Immersion Lithography

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Abstract

On-chip 1-D photonic crystal nanocavities were designed and fabricated in a 300 mm silicon-on-insulator wafer using a CMOS-compatible process with 193 nm immersion lithography and silicon oxide planarization. High quality factors up to 10 $^{5}$ were achieved. By changing geometrical parameters of the cavities, we also demonstrated a wide range of wavelength tunability for the cavity mode, a low insertion loss and excellent agreement with simulation results. These on-chip nanocavities with high quality factors and low modal volume, fabricated through a high-resolution and high-volume CMOS compatible platform open up new opportunities for the photonic integration community.

© 2014 IEEE

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