Abstract

We report a Si/Ge waveguide-coupled uni-traveling carrier (UTC) photodiode for high-power high-speed applications. Using the uni-traveling carrier structure rather than a PIN structure, capacitance and power handling are decoupled from responsivity and transit-time, enabling a detector with a 40 GHz bandwidth and a dilute absorption profile. This photodiode had a responsivity at 1550 nm of 0.5 A/W and a −1 dB compression current of 1.5 mA at 40 GHz. A longer device with the same cross-section had a 33 GHz bandwidth, responsivity of 0.7 A/W, and −1 dB compression current of 2.1 mA at 30 GHz.

© 2014 IEEE

Si/Ge uni-traveling carrier photodetector

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