Abstract
Nanostructured GaN-based light-emitting diode (LED), with its high performance on light extraction
efficiency, has attracted significant attention for the potential application in solid state lighting. However,
patterning structures at nanoscale feature size with large area and low cost is of great importance and hardness. In
this paper, a 2 inch anodic aluminum oxide (AAO) template was used as the initial mold to copy the
photonic-crystal-like structures (PCLSs) on a blue-light LED by soft UV nanoimprint lithography. An additional solute,
aluminum oxalate hydrate, is employed to overcome the burn-through issue in the high-voltage anodization which is
critical for the fabrication of the large-pore (250–500 nm) AAO. The photoluminescence and
electroluminescence enhancements of the patterned LED device with 150-nm-deep PCLSs are, respectively, 45% and
11.4% compared with the un-patterned LED device. A 3-D finite-difference time-domain simulation confirms that
the light extraction efficiency is enhanced when PCLSs are formed. The proposed method is simple, cheap, repeatable in
large area and compatible with the high volume production lines.
© 2013 IEEE
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