Abstract
This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on
sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial
layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth
and subsequent lateral growth because of different lattice constants between the
implantation and implantation-free regions. As a result, air voids were formed at the
GaN/sapphire interface, above the implanted regions and below the active layers of LEDs.
We proposed the GaN layer growth mechanisms on the Ar-ISS, and characterized the LEDs
with embedded air voids at the GaN/sapphire interface. Using a 20-mA current injection,
the light output of the experimental LEDs was found to be 15% greater than that of
conventional LEDs. This enhancement can be attributed to the light scattering at the
textured GaN/air void interfaces, which increases the probability of photons escaping
from the LEDs.
© 2013 IEEE
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