Abstract

We numerically investigate the potential of Al₂O₃:Er³⁺ active slot waveguides for realizing small-form factor lasers on silicon on insulator at 2.8 μm. Based on recent technological improvements in the reliable and low-cost fabrication of alumina doped with high Er³⁺ concentration and exploiting the extremely high field intensity achievable in optimized active slot waveguides, we point out the possibility of realizing silicon-compatible emitters at 2.8 μm, optically pumped at 1480 nm with a few milliwatts threshold pump power. A strong potential impact can be envisaged for chemical sensing, biosensing and lab-on-a-chip applications.

© 2011 IEEE

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