Abstract
The internal quantum efficiency, responsivity, and sensitivity of symmetric
surface-plasmon waveguide Schottky detectors in silicon are investigated theoretically
at room temperature at $\lambda_{0}
= 1310$ and 1550 nm. The detectors consist of a thin metal
stripe buried in Si, forming Schottky contacts along all metal/Si interfaces,
with detection occurring via internal photoemission over the Schottky barriers.
Several metals are considered for the stripe (Au, Ag, Al, Cu, CoSi$_{2}$). The internal
quantum efficiency is significantly enhanced for stripes that are thin compared
to the hot carrier attenuation length. Responsivities of 0.1 to 0.21 A/W and
receiver sensitivities of ${-}24$ and ${-}18$ dBm are predicted for 1.5 and 10 GHz electrical bandwidths (${\sim} {\hbox {2.5}}$ Gbit/s
and $ > 10$ Gbit/s),
respectively. This predicted performance, at room temperature, is competitive
with the best cryogenically cooled conventional Schottky detectors and is
adequate for optical interconnect and power monitoring. The detectors are
attractive for applications requiring broadband (electrical and optical) infrared
detectors in Si.
© 2011 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription