Abstract
Total internal reflection optical switches structures are well known.
However, previously reported switches based upon carrier injection have suffered
from the diffusion of carriers within the guiding layer leading to inefficient
reflection. While some attempts have been made to restrict the diffusion of
carriers in devices fabricated in materials other than silicon, carrier diffusion
has still been possible. In this paper, we propose the use of a thin ${\hbox {SiO}}_{2}$ barrier around
the carrier injection region to improve the performance of the device. Modeling
data has shown that high-performance switching is possible by confining the
carriers in this way. Modeling suggests that switching times of the order
of 5 ns can be achieved with a switching current of the order of 30 mA.
© 2008 IEEE
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