Abstract

Semiconductor Raman amplifiers are useful for frequency selection in terahertz bandwidth and wavelength division multiplexing (WDM) systems with terabit capacity, as well as direct terabit optical communication systems. We have developed GaP-AlGaP Raman waveguides with micrometer-size cross sections. We have reduced residual optical loss of the waveguide by improvement of the fabrication process and realized a low-loss waveguide that is 10-mm long, which has a continuous wave (CW) Raman gain of 3.7 dB. Also, the time-gated amplification with 80-ps pulse pumping is performed and 20-dB gain is obtained. These performances are very suitable for light frequency selection in terahertz bandwidth and WDM optical communication systems.

[IEEE ]

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