Abstract

We compare monolithic silicon optical receivers fabricated on high resistivity and silicon-on-insulator (SOI) substrates. Each receiver consisted of a lateral p-i-n photodiode and an NMOS transimpedance preamplifier. At a drain voltage (VDD) of 3.5 V, a photodiode voltage (VPD) of 30 V, and a wavelength of 850 nm, the high resistivity receiver exhibited sensitivities of -31.9 dBm at 622 Mb/s and -23.2 dBm at the maximum operating speed of 1.0 Gb/s. At VDD = 5 V and VPD = 20 V, the sensitivity of the SOI receiver was -26.1 dBm at 622 Mb/s, -20.2 dBm at 1.0 Gb/s and -12.2 dBm at the maximum speed of 2.0 Gb/s. Single supply operation at 5 V and 3 V was also demonstrated for the SOI receiver. Methods for extending the speed and improving the sensitivity characteristics in more advanced technologies with lower supply voltages are discussed.

[IEEE ]

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